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CONTINUOUS TYPE GROWTH FOR SAPPHIRE SINGLE CRYSTAL, CAPABLE OF SHORTENING THE PROCESSING TIME

机译:蓝宝石单晶的连续类型生长,能够缩短处理时间

摘要

PURPOSE: A continuous type growth for sapphire single crystal is provided to extend the growth length of the crystal by increasing the amount of the raw material loaded into the crucible.;CONSTITUTION: The primary material(5) of the maximum amount is loaded into a basic crucible(3). The additional raw material is loaded secondarily into the basic crucible as a hook is locked on the lower part of the separating chamber. The amount of the additional raw material is 40% larger than the amount of raw material primarily loaded.;COPYRIGHT KIPO 2011
机译:用途:提供用于蓝宝石单晶的连续型生长,以通过增加装入坩埚的原材料的数量来延长晶体的生长长度;组成:最大数量的主要材料(5)被装入基本坩埚(3)。当钩子锁定在分离腔室的下部时,将额外的原材料第二次装载到基本坩埚中。额外原材料的数量比主要装载的原材料的数量大40%。; COPYRIGHT KIPO 2011

著录项

  • 公开/公告号KR20110042428A

    专利类型

  • 公开/公告日2011-04-27

    原文格式PDF

  • 申请/专利权人 NEOSEMITECH CORPORATION;

    申请/专利号KR20090099096

  • 发明设计人 JUNG HYUN SUK;OH MYUNG HWAN;

    申请日2009-10-19

  • 分类号C30B15/24;C30B29/20;

  • 国家 KR

  • 入库时间 2022-08-21 17:52:04

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