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HETERO-JUNCTION SILICON SOLAR CELL AND METHOD OF MANUFACTURING THE SOLAR CELL

机译:异质结硅太阳能电池及其制造方法

摘要

PURPOSE: A silicon hetero junction solar cell and a manufacturing method thereof are provided to improve an electric property by forming a diffusion preventing layer between an amorphous silicon layer and a transparent conductive oxide layer. CONSTITUTION: A second type amorphous silicon film(530a) is formed on the front of a first type crystal silicon substrate. The second type amorphous silicon film includes a second type semiconductor material which forms a P-N junction structure with a first type semiconductor material. A first diffusion preventing layer is formed by rapid thermal anneal at 200 to 300 degrees centigrade after a TiO2 is spread on the second type amorphous silicon film. A first transparent conductive oxide layer(550a) is formed on the front of the first diffusion preventing layer. A front electrode(560a) is electrically connected to the second type amorphous silicon film. A rear electrode is electrically connected to the first type crystal silicon substrate.
机译:目的:提供一种硅异质结太阳能电池及其制造方法,以通过在非晶硅层和透明导电氧化物层之间形成防扩散层来改善电性能。组成:第二种非晶硅膜(530a)形成在第一类晶体硅基板的正面。第二类型非晶硅膜包括与第一类型半导体材料形成P-N结结构的第二类型半导体材料。在将TiO 2散布在第二类型非晶硅膜上之后,通过在200至300摄氏度下进行快速热退火来形成第一防扩散层。在第一防扩散层的正面上形成第一透明导电氧化物层(550a)。前电极(560a)电连接到第二类型非晶硅膜。后电极电连接到第一类型晶体硅基板。

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