HARD MASK MATERIAL WITH HIGH HARDNESS AND LOW STRESS

摘要

PURPOSE: A hard mask material is provided to deposit a plurality of sub layers of silicon carbide doped by a plurality of densification plasma post-processes, thereby densely forming a hard mask film. ;CONSTITUTION: A diffusion barrier layer(105) is located in the boundary part between a copper layer(101) and a first dielectric layer(103). A dielectric diffusion barrier layer(107) is formed on the first dielectric layer and the copper layer. A second dielectric layer(109) is formed on the dielectric diffusion barrier layer. A dielectric buffer layer(111) is formed on the second dielectric layer. A hard mask layer(113) is formed on the dielectric buffer layer.;COPYRIGHT KIPO 2011