首页> 外国专利> METHOD FOR CONTROLLING THE TEMPERATURE OF A VERTICAL GROWTH TYPE FURNACE FOR SINGLE CRYSTALLINE INGOT GROWTH

METHOD FOR CONTROLLING THE TEMPERATURE OF A VERTICAL GROWTH TYPE FURNACE FOR SINGLE CRYSTALLINE INGOT GROWTH

机译:单晶锭生长的垂直生长炉的温度控制方法

摘要

PURPOSE: A method for controlling the temperature of a vertical growth type furnace is provided to automatically form a desired temperature environment in a process for forming a single crystalline ingot, thereby maintaining the quality of an ingot even though the length of the single crystalline ingot is lengthened. ;CONSTITUTION: A heater(130) and a temperature sensor(140) are placed in a furnace(110). The heater heats a quartz furnace(120). The temperature sensor measures the temperature of the furnace heated by the heater. The temperature sensor transmits the information about the measured temperature to a computer(150). A dual loop PID temperature controller(160) heats the heater or stops the operation of the heater according to a received temperature control signal. A temperature sensor(170) measures a temperature by each area of the furnace.;COPYRIGHT KIPO 2011
机译:目的:提供一种用于控制立式生长炉的温度的方法,以在形成单晶锭的过程中自动形成所需的温度环境,从而即使单晶锭的长度为10mm,也能保持锭的质量。加长。 ;组成:加热器(130)和温度传感器(140)放置在炉子(110)中。加热器加热石英炉(120)。温度传感器测量被加热器加热的炉子的温度。温度传感器将关于测得的温度的信息发送到计算机(150)。双回路PID温度控制器(160)根据接收到的温度控制信号加热加热器或停止加热器的操作。温度传感器(170)可测量熔炉各个区域的温度。; COPYRIGHT KIPO 2011

著录项

  • 公开/公告号KR20110064223A

    专利类型

  • 公开/公告日2011-06-15

    原文格式PDF

  • 申请/专利权人 UBIDOM CO. LTD.;

    申请/专利号KR20090120723

  • 发明设计人 JEONG HA MOON;

    申请日2009-12-07

  • 分类号C30B15/20;C30B29/06;H05B6/40;

  • 国家 KR

  • 入库时间 2022-08-21 17:51:44

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