ELECTROSTATIC DISCHARGE PROTECTION DEVICE FOR A SEMICONDUCTOR DEVICE AND LAYOUT METHOD THEREOF CAPABLE OF INCREASING ELECTROSTATIC DISCHARGE PERFORMANCE

摘要

PURPOSE: An electrostatic discharge protection device for a semiconductor device and layout method thereof are provided to deform the drain of an NMOSFET in an LVTSCR(Low Voltage Triggered Silicon Controlled Rectifier) structure, thereby reducing parasitic capacitance. ;CONSTITUTION: An N well region(250) is formed on a semiconductor substrate. A plurality of P well regions(210,220,230,240) is formed on the circumference which forms the N well region. A source region(260) is connected to the P well regions. A drain region(280) is formed on side of the N well region. A gate region(270) is connected to the P well regions.;COPYRIGHT KIPO 2011