THERMALLY ADVANCED METALLIZED CERAMIC SUBSTRATE FOR A POWER SEMICONDUCTOR MODULE AND A METHOD FOR MANUFACTURING THEREOF, CAPABLE OF EFFICIENTLY EMITTING HEAT FROM A POWER SEMICONDUCTOR DEVICE

摘要

PURPOSE: A thermally advanced metallized ceramic substrate for a power semiconductor module and a method for manufacturing thereof are provided to prevent a crack in a substrate by efficiently absorbing heat from a power semiconductor module. ;CONSTITUTION: In a thermally advanced metallized ceramic substrate for a power semiconductor module and a method for manufacturing thereof, a first adhesive layer(330) is formed on a ceramic substrate(310). A first metal layer(350) is formed on the first adhesive layer. A second metal layer(360) is formed on the first metal layer. The first metal layer and the second metal layer form one electric conductive layer. The first metal layer compensates the difference of coefficient of thermal expansion between the ceramic substrate and the second metal layer.;COPYRIGHT KIPO 2011