首页> 外国专利> Thermally Advanced Metallized Ceramic Substrate for Semiconductor Power Module and Method for Manufacturing thereof

Thermally Advanced Metallized Ceramic Substrate for Semiconductor Power Module and Method for Manufacturing thereof

机译:用于半导体功率模块的热先进的金属化陶瓷基板及其制造方法

摘要

The metallizing the thermal properties of ceramic substrates for improved power semiconductor module and its manufacturing method are disclosed. Original plate for a printed circuit board of the power semiconductor ceramic modules (Metallized Ceramic Substrate) of the present invention by a thick film of metal is a relatively large thermal expansion coefficient between the conductive layer of the substrate and vacuum depositing a copper (Cu) of the ceramic material to the magnetron sputtering By forming, to compensate for the difference in thermal expansion coefficient between the substrate and the copper thick-film. Accordingly, the original plate of the ceramic printed circuit board (Metallized Ceramic Substrate) will absorb the heat shock at the same time and effectively release the heat generated by the mounted Sikkim electrical or electronic device on the upper surface, thermal expansion coefficient of the ceramic material and copper of the impact thermal destruction caused by the difference (Crack) The phenomenon is significantly reduced. ; ceramic printed circuit board, Metallized Ceramic Substrate, thermal expansion coefficient, magnetron sputtering
机译:本发明公开了用于改善功率半导体模块的陶瓷基板的热性能的金属化及其制造方法。本发明的功率半导体陶瓷模块(金属化陶瓷基板)的印刷电路板用金属厚膜形成的原板是基板的导电层与真空蒸镀铜(Cu)之间的热膨胀系数较大的板。通过形成陶瓷材料来形成磁控溅射,以补偿基板和铜厚膜之间的热膨胀系数差异。因此,陶瓷印刷电路板的原板(金属化陶瓷基板)将同时吸收热冲击,并有效地释放由安装在其上表面的锡金电气或电子设备产生的热量,陶瓷的热膨胀系数材料与铜的冲击造成的热破坏的区别(Crack)现象大大减少。 ;陶瓷印刷电路板,金属化陶瓷基板,热膨胀系数,磁控溅射

著录项

  • 公开/公告号KR101116516B1

    专利类型

  • 公开/公告日2012-02-28

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20090131906

  • 发明设计人 김용모;김갑석;

    申请日2009-12-28

  • 分类号H05K3/46;

  • 国家 KR

  • 入库时间 2022-08-21 17:08:36

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