首页> 外国专利> RESIST SUBLAYER AROMATIC RING CONTAINING POLYMER AND A RESIST SUBLAYER COMPOSITION INCLUDING THE SAME CAPABLE OF IMPLEMENTING A COATING PROCESS USING A SPIN-ON COATING TECHNIQUE

RESIST SUBLAYER AROMATIC RING CONTAINING POLYMER AND A RESIST SUBLAYER COMPOSITION INCLUDING THE SAME CAPABLE OF IMPLEMENTING A COATING PROCESS USING A SPIN-ON COATING TECHNIQUE

机译:包含聚合物的抗蚀剂次要芳族环和包含使用旋涂技术实施涂布过程的能力相同的抗蚀剂次要层组成

摘要

PURPOSE: A resist sublayer aromatic ring containing polymer and a resist sublayer composition including the same are provided to secure the sufficient resistance characteristic with respect to multi-etching operations. ;CONSTITUTION: A resist sublayer aromatic ring containing polymer includes a structural unit represented by chemical formula 1. In the chemical formula 1, the p is the integer of 1 or 2. The q is the integer of 1 to 5. The k is the integer of 1 to 6. The value of q+k is the integer of 1 to 6. The X is hydroxyl group, substituted or non-substituted C1 to C10 alkoxy group, or substituted or non-substituted C6 to C30 aryloxy group. The Ra is substituted or non-substituted C1 to C10 alkyl group, substituted or non-substituted C3 to C8 cycloalkyl group, substituted or non-substituted C6 to C30 aryl group, substituted or non-substituted C2 to C10 alkenyl group, or halogen. The Rb is hydrogen, substituted or non-substituted C1 to C10 alkyl group, substituted or non-substituted C3 to C8 cycloalkyl group, or substituted or non-substituted C6 to C30 aryl group.;COPYRIGHT KIPO 2011
机译:目的:提供一种含抗蚀剂子层芳环的聚合物和包括该聚合物的抗蚀剂子层组合物,以确保相对于多次蚀刻操作具有足够的电阻特性。 ;组成:含抗蚀剂亚层芳环的聚合物包含化学式1表示的结构单元。在化学式1中,p是1或2的整数。q是1至5的整数。k是1〜6的整数。q+ k的值是1〜6的整数。X是羟基,取代或未取代的C1〜C10的烷氧基,或取代或未取代的C6〜C30的芳氧基。 Ra是取代或未取代的C 1至C 10烷基,取代或未取代的C 3至C 8环烷基,取代或未取代的C 6至C 30芳基,取代或未取代的C 2至C 10烯基或卤素。 Rb是氢,取代或未取代的C1至C10烷基,取代或未取代的C3至C8环烷基,或取代或未取代的C6至C30芳基。; COPYRIGHT KIPO 2011

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