MONOCRYSTAL GROWING APPARATUS AND MONOCRYSTAL GROWING METHOD AND AN INGOT AND WAFER WHICH ARE GROWN BY THE SAME

摘要

PURPOSE: A monocrystal growing apparatus and a monocrystal growing method are provided to use a method to easily control oxygen dissemination when separating a residual melt volume using a magnetic field, thereby enabling the efficient control of low oxygen, a crystal length direction, and a wafer in-plane oxygen deviation.;CONSTITUTION: A monocrystal growing apparatus includes a crucible and a magnet. The crucible is able to hold melt. The magnet is separated from the crucible and installed in the circumference of the crucible. The location of a magnet is controlled according to a ratio α of residual melt volume which is varying depending on the growth of a monocrystal ingot. The position of the magnet is determined by setting the ratio α of residual melt volume as 0.3 to 0.6. The ratio α equals to Va divided by Vt, here Vt is a total residual volume of the melt and Va is a residual volume of melt in a region higher than a maximum gauss position(MGP).;COPYRIGHT KIPO 2011