首页> 外国专利> ADIABATIC SECTION MOBILE SYSTEM CAPABLE OF IMPROVING THE QUALITY OF A SILICON SINGLE CRYSTAL INGOT AND A MANUFACTURING DEVICE OF A SILICON SINGLE CRYSTAL INGOT INCLUDING THE SAME

ADIABATIC SECTION MOBILE SYSTEM CAPABLE OF IMPROVING THE QUALITY OF A SILICON SINGLE CRYSTAL INGOT AND A MANUFACTURING DEVICE OF A SILICON SINGLE CRYSTAL INGOT INCLUDING THE SAME

机译:能够提高硅单晶锭质量的绝热断面移动系统及包括该硅单晶锭的制造装置

摘要

PURPOSE: An adiabatic section mobile system and a manufacturing device of a silicon single crystal ingot including the same are provided to maintain melt gap by descending a adiabatic section to the same speed as the surface of the silicon solution while the single crystal ingot grows.;CONSTITUTION: A heater heats a crucible(10). An adiabatic section is moveably installed in the crucible in order to cover the heat toward the single crystalline ingot(12). The crucible is installed in a chamber(1) and accepts silicon solution(11). A drive motor(181) supplies the power to the adiabatic section in order to relatively move the adiabatic section about the crucible.;COPYRIGHT KIPO 2011
机译:目的:提供一种绝热部分移动系统和包括该绝热部分移动系统的硅单晶锭的制造装置,以通过使绝热部分下降到与单晶锭生长时的硅溶液表面相同的速度来保持熔体间隙。组成:加热器加热坩埚(10)。绝热段可移动地安装在坩埚中,以便向单晶锭(12)覆盖热量。将坩埚安装在腔室(1)中,并接受硅溶液(11)。驱动马达(181)为绝热部分提供动力,以使绝热部分绕坩埚相对移动。; COPYRIGHT KIPO 2011

著录项

  • 公开/公告号KR20110090234A

    专利类型

  • 公开/公告日2011-08-10

    原文格式PDF

  • 申请/专利权人 LG SILTRON INCORPORATED;

    申请/专利号KR20100009900

  • 申请日2010-02-03

  • 分类号C30B15/00;C30B29/06;H01L21/02;

  • 国家 KR

  • 入库时间 2022-08-21 17:51:19

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