BI-LINE SENSE AMPLIFIER, A SEMICONDUCTOR MEMORY DEVICE HAVING THE SAME AND A METHOD OF TESTING A BI-LINE MICRO-BRIDGE DEFECT, CAPABLE OF PREVENTING LEAKAGE CURRENT FLOWING THROUGH A BIT LINE SENSE AMPLIFIER

摘要

PURPOSE: A bi-line sense amplifier, a semiconductor memory device having the same and a method of testing a bi-line micro-bridge defect are provided to accurately the defect of a bit line micro bridge by applying a test driving voltage to an amplifier through a driving voltage supply line in a test mode.;CONSTITUTION: In a bi-line sense amplifier, a semiconductor memory device having the same and a method of testing a bi-line micro-bridge defect, a memory core(100) comprises a first memory cell(110) and a second memory cell(120) The memory core comprises a bit line sense amplifier(130), a first precharge circuit(140), and a column selection circuit(150) A bit line sense amplifier detects the voltage difference between the bit line and the complementary bit line A first precharge circuit offers a bit line free charge voltage to the bit line and the complementary bit line. The first precharge circuit makes the voltage of the bit line and the voltage of the complementary bit line equal. The column selection circuit combines the bit line and complementary bit line with a local input/output line pair.;COPYRIGHT KIPO 2011