首页> 外国专利> REDUNDANCY DATA STORING CIRCUIT, A REDUNDANCY DATA CONTROL METHOD AND A REPAIR DETERMINATION CIRCUIT OF A SEMICONDUCTOR MEMORY, CAPABLE OF IMPROVING REPAIR WORK EFFICIENCY

REDUNDANCY DATA STORING CIRCUIT, A REDUNDANCY DATA CONTROL METHOD AND A REPAIR DETERMINATION CIRCUIT OF A SEMICONDUCTOR MEMORY, CAPABLE OF IMPROVING REPAIR WORK EFFICIENCY

机译:冗余数据存储电路,冗余数据控制方法和能够提高修复工作效率的半导体存储器的修复确定电路

摘要

PURPOSE: A redundancy data storing circuit, a redundancy data control method and the repair determination circuit of a semiconductor memory are provided to perform repair of a fail cell after packing by enabling the change and rewriting of a repair address.;CONSTITUTION: In a redundancy data storing circuit, a redundancy data control method and the repair determination circuit of a semiconductor memory, a redundancy data storage(210) stores redundancy data. The redundancy data storage module outputs pre-stored redundancy data as a redundancy address. The redundancy data activation unit(220) outputs pre-stored redundancy data as a redundancy enable signal. A plurality of address comparison parts(230) compares the redundancy address with the column address. A determining unit(240) outputs a repair determination signal.;COPYRIGHT KIPO 2012
机译:目的:提供一种冗余数据存储电路,一种冗余数据控制方法和一种半导体存储器的修复确定电路,以便在打包后通过允许更改和重写修复地址来对故障单元进行修复。;构成:在冗余中数据存储电路,冗余数据控制方法和半导体存储器的修复确定电路,冗余数据存储器(210)存储冗余数据。冗余数据存储模块输出预先存储的冗余数据作为冗余地址。冗余数据激活单元(220)输出预先存储的冗余数据作为冗余使能信号。多个地址比较部分(230)比较冗余地址和列地址。确定单元(240)输出修复确定信号。; COPYRIGHT KIPO 2012

著录项

  • 公开/公告号KR20110097095A

    专利类型

  • 公开/公告日2011-08-31

    原文格式PDF

  • 申请/专利权人 HYNIX SEMICONDUCTOR INC.;

    申请/专利号KR20100016743

  • 发明设计人 SEO WOO HYUN;RHO KWANG MYOUNG;

    申请日2010-02-24

  • 分类号G11C29/18;G11C7/06;G11C7/10;

  • 国家 KR

  • 入库时间 2022-08-21 17:51:12

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