首页> 外国专利> NEXT GENERATION NANO DEVICE ETCHING APPARATUS FOR A LOW DAMAGE PROCESS CAPABLE OF CONTROLLING A PRECISE ETCHING PROCESS

NEXT GENERATION NANO DEVICE ETCHING APPARATUS FOR A LOW DAMAGE PROCESS CAPABLE OF CONTROLLING A PRECISE ETCHING PROCESS

机译:能够控制精确刻蚀过程的低损伤过程的下一代纳米器件刻蚀装置

摘要

PURPOSE: A next generation nano device etching apparatus for a low damage process is provided to supply an etching apparatus which is able to perform etching, neutral beam etching, and atomic layer etching at in-situ.;CONSTITUTION: A dip etching chamber(100) generates high density plasma. A target processing object is etched using the high density plasma. A neutral beam etching chamber(200) generates a neutral beam. The target processing object is etched using the neutral beam. Two kinds of etching chambers generate the neutral beam. The target processing object is etched using the neutral beam and the neutral beam is selected among a neutral beam atomic layer etching chamber(300). Two kinds of etching chambers are connected to a transfer chamber(400).;COPYRIGHT KIPO 2012
机译:目的:提供一种用于低损伤工艺的下一代纳米器件刻蚀设备,以提供能够在原位进行刻蚀,中性束刻蚀和原子层刻蚀的刻蚀设备。构成:浸蚀刻蚀腔室(100英寸) )产生高密度等离子体。使用高密度等离子体蚀刻目标处理对象。中性束蚀刻室(200)产生中性束。使用中性束蚀刻目标处理对象。两种蚀刻室产生中性束。使用中性束蚀刻目标处理对象,并且从中性束原子层蚀刻室(300)中选择中性束。两种蚀刻腔室连接到传送腔室(400).; COPYRIGHT KIPO 2012

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