ETCH PROXIMITY CORRECTING METHOD, PHOTOMASK LAYOUT FORMING METHOD USING THE SAME, A COMPUTER READABLE STORAGE MEDIUM STORING A PROGRAMMED COMMAND, AND MASK IMAGING SYSTEM

摘要

PURPOSE: An etch proximity correcting method, a photomask layout forming method using the same, a computer readable storage medium storing a programmed command, and a mask imaging system are provided to improve yield by making a mask matched with a target pattern.;CONSTITUTION: A layout is received(S210). A target point is selected on the edge of the layout(S220). A proximity range is set from a target point(S230). A distance dependent component, a direction dependent component, or a probability function are set in the proximity range(S240). The surface integral of the proximity function is calculated in the proximity range(S250).;COPYRIGHT KIPO 2012