首页> 外国专利> HIGH POWER LASER DIODE MODULE WITH A RELIABLE SINGLE WAVELENGTH WHICH IS THERMALLY AND ELECTRICALLY STABLE AND A MANUFACTURING METHOD THEREOF

HIGH POWER LASER DIODE MODULE WITH A RELIABLE SINGLE WAVELENGTH WHICH IS THERMALLY AND ELECTRICALLY STABLE AND A MANUFACTURING METHOD THEREOF

机译:具有可靠且热稳定的单波长的大功率激光二极管模块及其制造方法

摘要

PURPOSE: A high power laser diode module and a manufacturing method thereof are provided to use two single laser diode chips, thereby combining two times of power with a single optical fiber.;CONSTITUTION: A first laser diode chip(100) and a second laser diode chip(200) project a laser beam of a single wavelength by generating a monochromatic laser beam. The first and second laser diode chips are welded to be facing each other in order to electrically be connected to an electrode of the same polarity. The electrode of the same polarity is electrically connected to an external conductor. A first and second sub mounts(300,400) are respectively welded on an exposed surface facing with the welded surface of the first and second laser diode chips. The first and second sub mounts emit heat generated in a laser light emission driving state.;COPYRIGHT KIPO 2012
机译:目的:提供一种高功率激光二极管模块及其制造方法,以使用两个单个激光二极管芯片,从而利用单个光纤将两倍功率组合在一起。;组成:第一激光二极管芯片(100)和第二激光器二极管芯片(200)通过产生单色激光束来投射单波长的激光束。第一和第二激光二极管芯片被焊接成彼此面对,以电连接到相同极性的电极。相同极性的电极电连接到外部导体。第一和第二子底座(300,400)分别焊接在与第一和第二激光二极管芯片的焊接表面相对的暴露表面上。第一和第二子支架散发在激光发射驱动状态下产生的热量。; COPYRIGHT KIPO 2012

著录项

  • 公开/公告号KR20110111092A

    专利类型

  • 公开/公告日2011-10-10

    原文格式PDF

  • 申请/专利权人 COSET CO. LTD.;

    申请/专利号KR20100030489

  • 发明设计人 LEE HYUN JU;YUN JAE CHUN;KANG SEUNG GOO;

    申请日2010-04-02

  • 分类号H01S3/0941;H01S3/067;

  • 国家 KR

  • 入库时间 2022-08-21 17:51:00

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