CRITICAL DIMENSION CORRECTING METHOD OF A CONTACT HOLE PATTERN WHICH CLASSIFIES BY MATCHING A RANDOM CONTACT HOLE ACCORDING TO THE SHAPE OF A SURROUNDING HOLE

摘要

PURPOSE: A critical dimension(CD) correcting method of a contact hole pattern is provided to analyze the CD of a random contact hole, thereby effectively correcting a CD error of a random contact hole pattern.;CONSTITUTION: An original layout of a contact hole pattern is designed(110). The critical dimension(CD) of the contact hole pattern transferred on a wafer is floated by being measured(130). A contact hole in a region where a correction is required is selected(140). A GDS(Graphic Data System) image clip near a measurement hole is made(150). The GDS image clips are compared and matched in order to be grouped for similar hole types(160). CD errors are corrected for each classified group(170).;COPYRIGHT KIPO 2012