首页> 外国专利> CRUCIBLE SUPPORT AND MANUFACTURING APPARATUS OF SILICON CRYSTAL INGOT HAVING THE SAME

CRUCIBLE SUPPORT AND MANUFACTURING APPARATUS OF SILICON CRYSTAL INGOT HAVING THE SAME

机译:具有相同功能的硅晶锭的坩埚支持和制造装置

摘要

crucible support, and a silicon single crystal ingot production device comprising the same are disclosed. Silicon melt (Silicon Melt) was grown in a crucible support which is provided in the silicon single crystal manufacturing apparatus for manufacturing a silicon single crystal ingot, the crucible support is formed on one side of the pedestal and the pedestal is formed in a bar-like, the silicon melt comprises a support plate for supporting the crucible, and means for receiving, the depression being formed on the outer surface of the pedestal recess is provided. Thus, the silicon melt is leaked to the outside of the quartz crucible or the crucible support and coagulation off between tubes, when solidified in a state flowing on the pedestal, or when a foreign object between the inlet tube and the pedestal, the silicon melt or by removing the foreign matter or dispersion, prevent friction between the support and the crucible chamber for rotation and thereby there is an advantage capable of inhibiting the vibration (vibration) generated in the silicon melt.
机译:公开了一种坩埚支撑件,以及包括该坩埚支撑件的硅单晶锭生产装置。在用于制造单晶硅锭的硅单晶制造设备中提供的坩埚支架中生长硅熔液(Silicon Melt),该坩埚支架形成在基座的一侧,而基座形成在条形结构中。类似地,硅熔体包括用于支撑坩埚的支撑板,以及用于接收的装置,该装置形成在基座凹部的外表面上。因此,当在基座上流动的状态下固化时,或者当入口管与基座之间的异物进入时,硅熔液泄漏到石英坩埚或坩埚支撑物的外部,并且在管之间凝结。或通过除去异物或分散体,防止支撑件和坩埚腔之间的摩擦而旋转,从而具有能够抑制硅熔体中产生的振动(振动)的优点。

著录项

  • 公开/公告号KR101005947B1

    专利类型

  • 公开/公告日2011-01-06

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20080114665

  • 发明设计人 이지혜;

    申请日2008-11-18

  • 分类号C30B15/10;C30B15/14;

  • 国家 KR

  • 入库时间 2022-08-21 17:50:43

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