首页> 外国专利> A METHOD FOR FABRICATING METAL NANOPIN ARRAY AND AN ELECTRON EMISSION ELEMENT USING THE NANOPIN ARRAY

A METHOD FOR FABRICATING METAL NANOPIN ARRAY AND AN ELECTRON EMISSION ELEMENT USING THE NANOPIN ARRAY

机译:一种利用纳米销阵列制造金属纳米销阵列和电子发射元件的方法

摘要

The present invention is the control of the position and shape , as well as exhibit excellent electron emission efficiency than the conventional nanorods and with the object of the present invention to provide a method for producing nano easy pin array . ; the production method according to the present invention for achieving the object is to form a thin film of the material constituting the nano- pins on the substrate and , after forming a nano- template on the thin film by etching the thin film with a nano- template until the nano- template is completely removed , characterized in that the pin so that the nano- array according to the pattern of the nano- template on a substrate to form and a . ; nano pin array formed in accordance with the present invention is to have a very sharp shape of a few nanometers or less exhibits excellent efficiency as a field emitter .
机译:本发明是对位置和形状的控制,并且表现出比常规纳米棒优异的电子发射效率,并且本发明的目的是提供一种制备纳米易销阵列的方法。 ;用于实现该目的的根据本发明的制造方法是在基板上形成构成纳米针的材料的薄膜,并且在该薄膜上通过用纳米纳米线蚀刻薄膜而形成纳米模板之后。模板直到纳米模板被完全去除为止,其特征在于,使针脚根据纳米模板的图案在基板上形成纳米阵列并形成。 ;根据本发明形成的纳米针阵列将具有几纳米或更小的非常尖锐的形状,作为场发射器具有优异的效率。

著录项

  • 公开/公告号KR101024594B1

    专利类型

  • 公开/公告日2011-03-31

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20080093535

  • 发明设计人 김형준;손종역;신영한;

    申请日2008-09-24

  • 分类号H01J1/304;H01J9/02;B82Y40/00;

  • 国家 KR

  • 入库时间 2022-08-21 17:50:28

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