NFC(NITRIDE FLOATING CAPACITOR) MASK WITHOUT AN ACUTE ANGLE IN A PART IN WHICH A MAT DIVIDED LINE MEETS AND A METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE USING THE SAME

摘要

PURPOSE: An NFC(Nitride Floating Capacitor) mask and a method for fabricating a semiconductor device using the same are provided to stably support the bottom electrodes of a capacitor by nor forming an acute angle in a part in which a mat divided line meets.;CONSTITUTION: A method for fabricating a semiconductor device using the same comprises; a step in which a sacrificial dielectric layer(18) and a support layer are successively formed on the contact of a bottom electrode(26), a step in which a recess for the bottom electrode is formed to expose the contact of the bottom electrode while the sacrificial dielectric layer and the support layer are selectively etched, a step in which the bottom electrode is formed while a conducting material is evaporated in a recess inner surface for the bottom electrode, a step in which a support layer pattern is formed while the support layer is patterned with a NFC(Nitride Floating Capacitor)(20) mask, a step in which the bottom electrode is exposed while the sacrificial dielectric layer is eliminated by a dip-out process, and a step in which the dielectric layer and the upper electrode are formed in the exposed surface of the bottom electrode.;COPYRIGHT KIPO 2012