Method for enhancing performance of device by using low temperature annealing treatment

摘要

It provides a method for improving device performance. The method of improving the performance of the device includes the steps of forming a first type semiconductor layer on a substrate, forming a second type semiconductor layer on the first type semiconductor layer, and manufacturing the device and the device at least -100 ° C or less. After immersing in a cryogenic coolant having a temperature of, it is left at room temperature to perform a low temperature annealing treatment. In addition, the method of improving the performance of the device comprises the steps of providing a package device having a package substrate and a single device disposed on the package substrate and immersing the package device in a cryogenic coolant having a temperature of at least -100 ℃ or less It is left at room temperature to perform a low temperature annealing treatment.;Light emitting device, performance improvement method, cryogenic coolant, low temperature annealing treatment