Method for Measuring and Controlling Melting Gap in Cz-Si crystal growth

摘要

A method of measuring the distance between the insulating member and the molten silicon melt in the single crystal ingot growth apparatus, the by measuring the melting interval in a numerical control method and the method for adjusting the distance that can be quantified is provided. Melting distance measuring method according to the invention is obtained the image information of the shadow of the reflection measured at the terminal and the load terminal of the load measurement silicon melt surface mounted on the heat insulating member, the first coordinates and the measured load of the measuring terminal shadow rod ends measuring a second coordinate, and measuring the melting interval using the first coordinates and the difference between the second coordinate. Further, the melting interval control method according to the invention is based on the initial second coordinate, measured according to the method of the present invention the melting interval, measures the water level changed by the change in the second coordinate silicon melt surface again, and the initial claim 2 to quantify the difference between the coordinates and the transformed second coordinate, and moves the crucible based on this. According to the melting interval measurement and a control method in the single crystal ingot growth process according to the present invention, in the single crystal ingot growth apparatus to quantitatively measure the distance between the insulating member and the silicon melt surface have an exact spacing, as well as based on this crucible By moving, can be maintained in a melt gap according to a water level change of the silicone solution to be constant, it is effective to keep constant the quality of the single crystal ingot is grown.