FRONT CONTACT BASED ON INDIUM-ZINC OXIDE FOR PHOTOELECTRIC DEVICE AND METHOD OF MAKING SAID CONTACT

摘要

FIELD: physics.;SUBSTANCE: disclosed photoelectric device is made from amorphous silicon and has a front glass substrate, an active semiconductor film containing amorphous silicon, an electroconductive and virtually transparent front electrode lying at least between the front glass substrate and the active semiconductor film and a rear electrode. The active semiconductor film lies between the front electrode and the rear electrode. The front electrode has a conducting layer which contains indium-zinc oxide (IZO). The invention also discloses one more version of the photoelectric device and a method of making photoelectric devices.;EFFECT: stabilisation of optical and electrical properties of the photoelectric device.;20 cl, 2 dwg