METHOD OF REMOVING PHOSPHORUS FLUORIDE VOLATILE IMPURITIES FROM SILICON TETRAFLUORIDE

摘要

FIELD: chemistry.;SUBSTANCE: invention can be used in the of polycrystalline silicon. Silicon tetrafluoride and volatile phosphorus fluorides undergo combined sorption on sodium fluoride at temperature 200-250°C. Water vapour is fed at temperature 450-550°C, and purified silicon tetrafluoride is desorbed and condensed.;EFFECT: invention enables to obtain silicon tetrafluoride with purity of up to 99,7%.;1 tbl, 1 ex