Electrical or electronic composite component e.g. junction FET (JFET) has connection layer and interlayer whose active compound is arranged on attaching layers along opposite side of sinter layers

摘要

The component (10a) has sinter layers (14,21,22) which are formed between attaching layers (11,13). The active compound of connection layer and interlayer (19) is arranged on attaching layers along opposite side of sinter layers. The thickness of interlayer made of aluminum or copper, is in the range of 100-700 mu m. The attaching layer (13) is made of copper or copper alloy with yield point between 50-250 Mpa, and aluminum or aluminum alloy with yield point between 40-200 Mpa.