首页> 外文OA文献 >Electrical, Structural and Compositional Characterization of Interlayer Material and New Active Layers in Organic Solar Cells
【2h】

Electrical, Structural and Compositional Characterization of Interlayer Material and New Active Layers in Organic Solar Cells

机译:有机太阳能电池中中间层材料和新活性层的电,结构和组成表征

代理获取
本网站仅为用户提供外文OA文献查询和代理获取服务,本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文,但由于OA文献来源多样且变更频繁,仍可能出现获取不到、文献不完整或与标题不符等情况,如果获取不到我们将提供退款服务。请知悉。

摘要

This dissertation focuses on the electrical, structural, and compositional characterization of atomic layer deposited ZnO, and the structural characterization of modified titanyl (TiOPc 6 and TiOPc 9) and copper phthalocyanines (Pc 5). All materials studied have application in organic photovoltaic devices, either as an interlayer (ALD ZnO) or as part of the active layer (TiOPcs and Pc 5). The goals of this research are to advance the understanding of defect chemistry and electronic properties of ALD ZnO after exposure to oxygen plasma, Ar+ sputtering, and aryl phosphonic acid modifications, and to understand the relationship between the chemical structure of modified phthalocyanines and their molecular organization.Based on X-ray photoelectron spectroscopy and photoluminescence, it was determined that the predominant defects in as-received ALD ZnO are zinc vacancies mostly located in the top layer of the ZnO film. Oxygen plasma treatment of as-received ALD ZnO changed the predominant defects to oxygen interstitials, which migrated out of the sample when left exposed in air. Phosphonic acid modification of oxygen plasma treated ALD ZnO was found to suppress the migration of oxygen interstitials from the ALD ZnO sample.Ultraviolet photoelectron spectroscopy was used to study the electronic properties of ALD ZnO. It was determined that surface chemistry strongly influences the work function of ALD ZnO. Oxygen plasma treated ALD ZnO showed the highest work function and as-received ALD ZnO the lowest work function. The phosphonic acid modification of ALD ZnO decreased the work function and surface free energy when compared to oxygen plasma treated ALD ZnO. Near edge X-ray absorption fine structure spectroscopy results showed planes of benzyl rings in aryl phosphonic acid modifiers tilted at approximately 30 - 38° with respect to the surface normal.X-ray diffraction studies on modified phthalocyanines powders and thin films were performed to correlate their chemical composition with their crystal structure. It was determined that strong interactions between molecules lead to higher-order lattices (monoclinic or triclinic). However, upon annealing at higher temperatures, higher-order lattices were transformed to columnar phases because of the side chains incorporated into the modified phthalocyanines.
机译:本文主要研究原子层沉积ZnO的电学,结构和组成表征,以及改性钛氧基(TiOPc 6和TiOPc 9)和酞菁铜(Pc 5)的结构表征。研究的所有材料都可以作为中间层(ALD ZnO)或作为活性层的一部分(TiOPcs和Pc 5)应用于有机光伏器件。这项研究的目的是加深对暴露于氧等离子体,Ar +溅射和芳基膦酸改性后的ALD ZnO的缺陷化学和电子性能的了解,并了解改性酞菁的化学结构与其分子结构之间的关系。根据X射线光电子能谱和光致发光,可以确定所收到的ALD ZnO中的主要缺陷是锌空位,其主要位于ZnO膜的顶层。氧等离子体处理的ALD ZnO的主要缺陷改变为氧间隙,当其暴露在空气中时,氧间隙会从样品中迁移出来。研究发现,通过氧等离子体处理的ALD ZnO进行磷酸修饰可以抑制ALD ZnO样品中氧的迁移。紫外光电子能谱研究了ALD ZnO的电子性质。已确定表面化学对ALD ZnO的功函数有很大影响。氧等离子体处理的ALD ZnO表现出最高的功函,而收到的ALD ZnO表现出最低的功函。与氧等离子体处理的ALD ZnO相比,ALD ZnO的膦酸改性降低了功函数和表面自由能。近缘X射线吸收精细结构光谱结果表明,芳基膦酸改性剂中的苄基环平面相对于表面法线倾斜约30-38°。对改性酞菁粉末和薄膜进行X射线衍射研究以关联它们的化学组成及其晶体结构。已确定分子之间的强相互作用会导致更高阶的晶格(单斜晶或三斜晶)。然而,由于在改性的酞菁中掺入了侧链,因此在较高温度下退火时,高阶晶格转变为柱状相。

著录项

  • 作者

    Macech Mariola Renata;

  • 作者单位
  • 年度 2012
  • 总页数
  • 原文格式 PDF
  • 正文语种 en
  • 中图分类

相似文献

  • 外文文献
  • 中文文献
  • 专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号