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spin controlled resistance and nanogates

机译:自旋控制电阻和纳米门

摘要

A spin driven resistor including a magnetic body whose resistance increases due to resonance when subjected to an externally applied magnetic field while in the presence of an externally applied electromagnetic field is presented. The spin driven resistor has applications in a variety of spintronic devices including read heads and detectors that are very fast and operate and low power. The spin driven resistor may also be used to modulate spin value, spin tunnel junction, spin-LED, and spin-transistor devices by exposing the device to an electromagnetic field and a magnetic field.
机译:提出了一种自旋驱动电阻器,其包括在存在外部施加的电磁场的情况下当受到外部施加的磁场时其电阻由于共振而增加的磁体。自旋驱动电阻器可用于多种自旋电子设备,包括读取头和检测器,它们非常快,可操作且功耗低。通过将自旋驱动电阻器暴露在电磁场和磁场中,自旋驱动电阻器还可用于调制自旋值,自旋隧道结,自旋LED和自旋晶体管器件。

著录项

  • 公开/公告号DE60336337D1

    专利类型

  • 公开/公告日2011-04-21

    原文格式PDF

  • 申请/专利权人 THE OHIO STATE UNIVERSITY;

    申请/专利号DE20036036337T

  • 发明设计人 EPSTEIN ARTHUR J.;

    申请日2003-09-19

  • 分类号G11C11/16;G01R33/06;G01R33/09;H01F10/193;H01F10/32;

  • 国家 DE

  • 入库时间 2022-08-21 17:46:10

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