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Treating a metal layer deposited on a substrate by an ion beam, comprises introducing the metal layer in the substrate by selecting a specific dose of ions per unit area, where the metal layer has a thickness of specified range
Treating a metal layer deposited on a substrate by an ion beam, comprises introducing the metal layer in the substrate by selecting a specific dose of ions per unit area, where the metal layer has a thickness of specified range
The process of treating a metal layer (50) deposited on a substrate (30, 60) by an ion beam (100), comprises introducing the metal layer in the substrate, where the metal layer has a thickness of 0.2-1000 nm, by selecting the dose of ions per unit area of 10 14ions/cm 2and 10 18ions/cm 2. The accelerating voltage of ions is 20-200 kV. The temperature of the metal layer is less than or equal to Tf, which is the melting temperature of the metal of the metal layer. The process further comprises spraying and pre-introducing the metal layer on the substrate by ion bombardment. The process of treating a metal layer (50) deposited on a substrate (30, 60) by an ion beam (100), comprises introducing the metal layer in the substrate, where the metal layer has a thickness of 0.2-1000 nm, by selecting the dose of ions per unit area of 10 14ions/cm 2and 10 18ions/cm 2. The accelerating voltage of ions is 20-200 kV. The temperature of the metal layer is less than or equal to Tf, which is the melting temperature of the metal of the metal layer. The process further comprises spraying and pre-introducing the metal layer on the substrate by ion bombardment before introducing the metal layer in the substrate so as to reduce the initial thickness of the metal layer and until the metal layer reaches the desired thickness. The substrate and the metal layer are movable with respect to the ion beams at a speed of 0.1-1000 mm/s. Single area of the metal layer is moved under the ion beams according to the speed of movement of ion beams. The substrate is made of ceramics, glass, semiconductors, metals and polymers. An independent claim is included for a substrate with a metal layer.
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机译:通过离子束(100)处理沉积在基板(30、60)上的金属层(50)的过程包括通过以下步骤将金属层引入基板中,其中金属层的厚度为0.2-1000nm。选择每单位面积的离子剂量为10 1> 4>离子/ cm 2>和10 1> 8>离子/ cm 2>。离子的加速电压为20-200 kV。金属层的温度小于或等于Tf,Tf是金属层的金属的熔化温度。该方法还包括通过离子轰击将金属层喷涂和预引入基板上。通过离子束(100)处理沉积在基板(30、60)上的金属层(50)的过程包括通过以下步骤将金属层引入基板中,其中金属层的厚度为0.2-1000nm。选择每单位面积的离子剂量为10 1> 4>离子/ cm 2>和10 1> 8>离子/ cm 2>。离子的加速电压为20-200 kV。金属层的温度小于或等于Tf,Tf是金属层的金属的熔化温度。该方法还包括在将金属层引入基板之前,通过离子轰击在基板上喷涂和预引入金属层,以减小金属层的初始厚度,直到金属层达到期望的厚度。基板和金属层可相对于离子束以0.1-1000 mm / s的速度移动。根据离子束的移动速度,金属层的单个区域在离子束下移动。基材由陶瓷,玻璃,半导体,金属和聚合物制成。对于具有金属层的基板包括独立权利要求。
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