GRAPHIC EPITAXIE ON SIC, HAVING OPENED GAP AND MOBILITY COMPARABLE TO THAT OF STANDARD GRAPHENE IN GAP NUL

摘要

The invention relates to a method for manufacturing a modified structure (801) comprising a modified semiconductor graphene layer (83) on a substrate (82), comprising the following successive steps: - providing an initial structure (800) ) having a graphene layer (82); - hydrogenation of the initial structure with a dose of exposure to a gas (85) of atomic hydrogen of between 100 and 1100 langmuirs, depositing added hydrogen atoms (H); the initial structure (800) comprising added hydrogen atoms (H) is subjected to at least one heat treatment (6) of temperature between 200 ° C and 400 ° C, the valence band of the modified graphene layer forming a Dirac cone and is separated from the conduction band by a gap between 0.25 eV and 1.8 eV.