Graphene epitaxied on SiC, with an open band gap and mobility comparable to standard graphene with zero band gap

摘要

A method of manufacturing a modified structure comprising a semiconducting modified graphene layer on a substrate, comprising the subsequent following steps:supply of an initial structure comprising at least one substrate,formation of a graphene layer on the substrate,hydrogenation of the initial structure by exposure to atomic hydrogen,characterized in that the hydrogenation step of the graphene layer is done with an exposure dose between 100 and 4000 Langmuirs, and forms a modified graphene layer.