首页> 外国专利> Circuit which allows read and write operation to a register file bit cell array at a lower supply voltage without increasing the area.

Circuit which allows read and write operation to a register file bit cell array at a lower supply voltage without increasing the area.

机译:该电路允许在较低的电源电压下对寄存器文件位单元阵列进行读写操作,而不会增加面积。

摘要

A register file is coupled to logic that reduces the contention between the NMOS devices and the PMOS devices in each bit cell of the register file during write and/or read operations, and hence the register file is able to operate at a lower minimum voltage. In one embodiment, the write bit line 150 (or data line) is directly connected to the gate of a PMOS switching device 342, which connects the power supply 360 to a first internal supply bus VCC_A, when write bit line is low. The complement write bit line 155 (or data line) is directly connected to the gate of PMOS device 346, and connects supply 360 to a second internal supply bus VCC_B, when complement write bit line is low. The first supply buses VCC_A , provides the supply voltage for one half of each of the cross coupled logic gates 111 forming the memory cells, whilst the second supply bus VCC_B provides power for the other half 112 of each of the cells. Hence, depending on the state of the write bit data line, in write mode, only one half of the bit cells are directly connected to the supply 360, by means of PMOS switches 342,346. In order to prevent the unconnected half of the memory cells from floating, an equalizer circuit, (or clamp) comprising of two weak PMOS devices in series, 352,350 connects the first and second supply busses VCC_A and VCC_B together. Also in the same embodiment, a read retention circuit is included, which connects a write enable signal 380 to the gate of two PMOS devices 344, 348, allowing the potential of both VCC_A and VCC_B to return to that of the power supply 360, during the read or inactive operation.
机译:寄存器堆耦合至逻辑,该逻辑减少了在写和/或读操作期间寄存器堆的每个位单元中的NMOS器件与PMOS器件之间的竞争,因此寄存器堆能够以较低的最小电压进行操作。在一个实施例中,写位线150(或数据线)直接连接到PMOS开关器件342的栅极,当写位线为低时,PMOS开关器件342将电源360连接到第一内部电源总线VCC_A。互补写入位线155(或数据线)直接连接到PMOS器件346的栅极,并且当互补写入位线为低时,将电源360连接到第二内部电源总线VCC_B。第一电源总线VCC_A为形成存储器单元的每个交叉耦合逻辑门111的一半提供电源电压,而第二电源总线VCC_B为每个单元的另一半112提供电源。因此,根据写位数据线的状态,在写模式下,只有一半的位单元通过PMOS开关342,346直接连接到电源360。为了防止未连接的一半存储单元浮动,由两个串联的弱PMOS器件组成的均衡器电路(或钳位电路)352350将第一和第二电源总线VCC_A和VCC_B连接在一起。同样在同一实施例中,包括读保持电路,该读保持电路将写使能信号380连接到两个PMOS器件344、348的栅极,从而在期间使VCC_A和VCC_B的电势返回到电源360的电势。读取或非活动操作。

著录项

  • 公开/公告号GB2479063A

    专利类型

  • 公开/公告日2011-09-28

    原文格式PDF

  • 申请/专利权人 INTEL CORPORATION;

    申请/专利号GB20110005029

  • 发明设计人 SEUNG H HWANG;SAPUMAL WIJERATNE;

    申请日2011-03-25

  • 分类号G11C11/417;G11C7/10;

  • 国家 GB

  • 入库时间 2022-08-21 17:45:00

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