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DEVICE OF MANUFACTURING MICROCRYSTAL SEMICONDUCTOR THIN FILM, AND METHOD OF MANUFACTURING MICROCRYSTAL SEMICONDUCTOR THIN FILM

机译:微晶半导体薄膜的制造装置以及微晶半导体薄膜的制造方法

摘要

PROBLEM TO BE SOLVED: To form a crystalline semiconductor thin film on a large-area substrate uniformly at a high speed.;SOLUTION: A device of manufacturing a microcrystal semiconductor thin film has: a vacuum container 10; an electrode 12 provided so as to be opposed to a substrate 100; gas supply means 22a, 22b, and 22c continuously supplying gas containing hydrogen as a main component into the vacuum container 10 at a constant rate; gas supply means 22d, 22e, and 22f supplying a semiconductor material gas individually and periodically for each divided region to the divided regions obtained by dividing a space between the substrate 100 and the electrode 12 into a plurality of parts in a plane of the substrate 100; high-frequency power supplies 40a, 40b, and 40c applying high-frequency voltages individually to regions corresponding to the divided regions to which the semiconductor material gas in the electrode 12 is supplied, in synchronization with the supply of the semiconductor material gas; control means 60 controlling on/off of the supply of the semiconductor material gas to the divided regions, and adding amplitude modulation to the high-frequency voltages to be applied to the electrode 12 in synchronization with the supply of the semiconductor material gas; and exhaust means 20 exhausting the gas in the vacuum container 10.;COPYRIGHT: (C)2012,JPO&INPIT
机译:解决的问题:在大面积基板上高速均匀地形成晶体半导体薄膜。解决方案:一种微晶半导体薄膜的制造装置具有:真空容器10;和设置在容器中的真空容器10。电极12设置成与基板100相对。气体供给装置22a,22b和22c以恒定的速率连续地向真空容器10中供给以氢为主要成分的气体。气体供应装置22d,22e和22f分别针对每个划分区域周期性地向通过将衬底100和电极12之间的空间划分成在衬底100的平面中的多个部分而获得的划分区域供应半导体材料气体。 ;高频电源40a,40b和40c与半导体材料气体的供给同步地,分别向与电极12中的半导体材料气体的供给区域对应的区域施加高频电压。控制装置60控制半导体材料气体向分割区域的供给的开/关,并与半导体材料气体的供给同步地对要施加到电极12的高频电压进行振幅调制。排气装置20将真空容器10内的气体排出。版权所有:(C)2012,日本特许厅&INPIT

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