首页> 外国专利> Cu-Ga-BASED ALLOY POWDER WITH LOW OXYGEN CONTENT, Cu-Ga-BASED ALLOY TARGET MATERIAL, AND METHOD FOR PRODUCING THE TARGET MATERIAL

Cu-Ga-BASED ALLOY POWDER WITH LOW OXYGEN CONTENT, Cu-Ga-BASED ALLOY TARGET MATERIAL, AND METHOD FOR PRODUCING THE TARGET MATERIAL

机译:低氧含量的基于Cu-Ga的合金粉末,基于Cu-Ga的合金靶材料以及制备该靶材料的方法

摘要

PROBLEM TO BE SOLVED: To provide a Cu-Ga-based alloy powder with a low oxygen content for producing a light-absorbing thin film layer of a solar cell and a method for producing a sputtering target material.SOLUTION: The Cu-Ga based alloy powder includes, in atom%, not less than 25% and less than 40% of Ga, the balance comprising Cu and unavoidable impurities, wherein the powder has an oxygen content of 200 ppm or less. The Cu-Ga based alloy sputtering target material includes, in atom%, not less than 25% and less than 40% of Ga, the balance comprising Cu and unavoidable impurities, wherein the sputtering target material has an oxygen content of less than 250 ppm and a grain size of more than 10 μm and not more than 100 μm. Furthermore, the method for producing the Cu-Ga based sputtering target material is provided, which uses the Cu-Ga based alloy powder as a raw material and the Cu-Ga based alloy powder is solidified and modified at a temperature of 400-850°C.
机译:解决的问题:提供一种用于制造太阳能电池的光吸收薄膜层的低氧含量的Cu-Ga基合金粉末以及一种用于溅射靶材的方法。所述合金粉末以原子%计包含不小于25%且小于40%的Ga,其余部分包含Cu和不可避免的杂质,其中所述粉末的氧含量为200ppm以下。铜-镓基合金溅射靶材料包括原子百分比不小于25%且小于40%的镓,其余部分包含铜和不可避免的杂质,其中溅射靶材料的氧含量小于250 ppm晶粒尺寸大于10μm且不大于100μm。此外,提供了一种以Cu-Ga基合金粉末为原料的Cu-Ga基溅射靶材的制造方法,并在400〜850℃的温度下进行了固化和改性。 C。

著录项

  • 公开/公告号JP2012214857A

    专利类型

  • 公开/公告日2012-11-08

    原文格式PDF

  • 申请/专利权人 SANYO SPECIAL STEEL CO LTD;

    申请/专利号JP20110081806

  • 发明设计人 SAWADA TOSHIYUKI;

    申请日2011-04-01

  • 分类号C23C14/34;C22C9;B22F3/14;B22F3/15;B22F1;B22F9/08;

  • 国家 JP

  • 入库时间 2022-08-21 17:43:48

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