首页>
外国专利>
Cu-Ga-BASED ALLOY POWDER WITH LOW OXYGEN CONTENT, Cu-Ga-BASED ALLOY TARGET MATERIAL, AND METHOD FOR PRODUCING THE TARGET MATERIAL
Cu-Ga-BASED ALLOY POWDER WITH LOW OXYGEN CONTENT, Cu-Ga-BASED ALLOY TARGET MATERIAL, AND METHOD FOR PRODUCING THE TARGET MATERIAL
展开▼
机译:低氧含量的基于Cu-Ga的合金粉末,基于Cu-Ga的合金靶材料以及制备该靶材料的方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
PROBLEM TO BE SOLVED: To provide a Cu-Ga-based alloy powder with a low oxygen content for producing a light-absorbing thin film layer of a solar cell and a method for producing a sputtering target material.SOLUTION: The Cu-Ga based alloy powder includes, in atom%, not less than 25% and less than 40% of Ga, the balance comprising Cu and unavoidable impurities, wherein the powder has an oxygen content of 200 ppm or less. The Cu-Ga based alloy sputtering target material includes, in atom%, not less than 25% and less than 40% of Ga, the balance comprising Cu and unavoidable impurities, wherein the sputtering target material has an oxygen content of less than 250 ppm and a grain size of more than 10 μm and not more than 100 μm. Furthermore, the method for producing the Cu-Ga based sputtering target material is provided, which uses the Cu-Ga based alloy powder as a raw material and the Cu-Ga based alloy powder is solidified and modified at a temperature of 400-850°C.
展开▼