首页> 外国专利> METHODS FOR PRODUCING Cu-Ga-BASED ALLOY POWDER HAVING LOW OXYGEN CONTENT AND SPUTTERING TARGET MATERIAL

METHODS FOR PRODUCING Cu-Ga-BASED ALLOY POWDER HAVING LOW OXYGEN CONTENT AND SPUTTERING TARGET MATERIAL

机译:低氧含量和溅射靶材的Cu-Ga基合金粉的制备方法

摘要

PROBLEM TO BE SOLVED: To provide methods for producing low oxygen Cu-Ga-based alloy powder and a sputtering target material each for producing a light absorption thin film layer of a solar cell.;SOLUTION: There is provided the method for producing a Cu-Ga-based alloy powder for obtaining the Cu-Ga-based alloy powder having an oxygen content of 100 ppm or less by atomization of a molten metal of the Cu-Ga-based alloy containing, by atom%, Ga of 25% or more and less than 40% and the balance Cu with inevitable impurities by N2 gas. There is also provided the method for producing a Cu-Ga-based sputtering target material using a raw material powder of the Cu-Ga-based alloy powder.;COPYRIGHT: (C)2015,JPO&INPIT
机译:解决的问题:提供一种用于生产低氧Cu-Ga基合金粉末的方法和一种溅射靶材料,分别用于制造太阳能电池的光吸收薄膜层。解决方案:提供了一种用于制造Cu的方法-Ga基合金粉末,用于通过雾化包含原子百分比为25%或以下的Ga的Cu-Ga基合金的熔融金属而获得氧含量为100ppm以下的Cu-Ga基合金粉末。 N 2 气体的含量大于或小于40%,余量的Cu带有不可避免的杂质。还提供了使用Cu-Ga基合金粉末的原料粉末生产Cu-Ga基溅射靶材料的方法。;版权所有:(C)2015,JPO&INPIT

著录项

  • 公开/公告号JP2015063760A

    专利类型

  • 公开/公告日2015-04-09

    原文格式PDF

  • 申请/专利权人 SANYO SPECIAL STEEL CO LTD;

    申请/专利号JP20140222556

  • 发明设计人 SAWADA TOSHIYUKI;

    申请日2014-10-31

  • 分类号B22F1/00;C23C14/34;B22F9/08;B22F3/14;B22F3/15;C22C9/00;B22F5/00;H01L31/18;H01L31/0749;

  • 国家 JP

  • 入库时间 2022-08-21 15:32:48

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