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ORGANIC DEVELOPING PROCESS METHOD AND ORGANIC DEVELOPING PROCESS DEVICE

机译:有机开发过程的方法和有机开发过程的设备

摘要

PROBLEM TO BE SOLVED: To provide an organic developing process method and an organic developing process device capable of stabilizing a fine line width in a circuit pattern and improving throughput without using a rinsing liquid and without being influenced by a time difference in an organic developing process.SOLUTION: The developing process device carries out development by supplying a developing solution to the surface of a wafer W after a resist is applied thereon and exposed, and the device includes: a developing nozzle 30 that discharges the developing solution containing an organic solvent simultaneously to the entire surface area of the wafer W; and a gas nozzle 40 that discharges N2 gas for stopping the development and for drying to the entire surface area of the wafer W. After a liquid film of the developing solution containing the organic solvent is simultaneously formed on the entire surface area of the wafer W by discharging the developing solution to the entire surface of the wafer W from the developing nozzle 30, N2 gas is discharged to the entire surface of the wafer W from the gas nozzle 40 to stop the development as well as to remove the developing solution to dry the wafer W.
机译:解决的问题:提供一种有机显影处理方法和有机显影处理装置,其能够在不使用冲洗液且不受有机显影处理中的时间差影响的情况下稳定电路图案中的细线宽度并提高生产率。解决方案:显影处理设备通过在其上施加抗蚀剂并曝光后在晶片W的表面上提供显影溶液来进行显影,该设备包括:显影喷嘴30,该喷嘴同时排出包含有机溶剂的显影溶液。晶片W的整个表面积;气体喷嘴40,其排出N 2气体以停止显影并干燥到晶片W的整个表面。在晶片W的整个表面上同时形成包含有机溶剂的显影液的液膜。通过从显影喷嘴30向晶片W的整个表面排出显影液,将N 2气体从气体喷嘴40排出至晶片W的整个表面以停止显影并除去显影液以使其干燥。晶片W。

著录项

  • 公开/公告号JP2012173510A

    专利类型

  • 公开/公告日2012-09-10

    原文格式PDF

  • 申请/专利权人 TOKYO ELECTRON LTD;

    申请/专利号JP20110035310

  • 申请日2011-02-22

  • 分类号G03F7/30;H01L21/027;

  • 国家 JP

  • 入库时间 2022-08-21 17:42:45

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