首页> 外国专利> Pattern defect analysis apparatus, a pattern defect analysis method and pattern defect analysis program

Pattern defect analysis apparatus, a pattern defect analysis method and pattern defect analysis program

机译:图案缺陷分析装置,图案缺陷分析方法和图案缺陷分析程序

摘要

PROBLEM TO BE SOLVED: To determine the fatal degree of pattern defects on the surface of a substrate device, with high reliability.;SOLUTION: In a pattern defect analyzing apparatus, a data process part 10 acquires a review image including a pattern defect of a substrate device through a defect review part 12 (by a review image acquiring part 104). The review image is compared with a reference image, having no defect for extracting a defect image. An image-aligning part 105 aligns the review image with an own layer design pattern image which is generated from the design data of a layer identical with the region corresponding to the review image. Based on the result of the alignment, other layer design pattern image is generated from the design data of other layer of the region, corresponding to the review image. Based on a composite image of the defect image and the other layer design pattern image, a relative positional relation between the defect and the other layer pattern is acquired; and based on the relative positional relationship, fatal degree is determined (fatal degree determining part 106).;COPYRIGHT: (C)2009,JPO&INPIT
机译:解决的问题:以高的可靠性确定基板装置表面上的图案缺陷的致命程度。解决方案:在图案缺陷分析装置中,数据处理部分10获取包括图像的图案缺陷的检查图像。基板装置通过缺陷检查部12(通过检查图像获取部104)。将检查图像与没有缺陷的参考图像进行比较,以提取缺陷图像。图像对齐部105将评论图像与从与对应于该评论图像的区域相同的层的设计数据生成的自己的层设计图案图像对齐。基于对齐的结果,从区域的另一层的设计数据生成另一层设计图案图像,该图像对应于查看图像。基于缺陷图像与另一层设计图案图像的合成图像,获取缺陷与另一层图案之间的相对位置关系。并根据相对位置关系确定致命程度(致命程度确定部分106)。版权所有:(C)2009,JPO&INPIT

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号