OPTICAL ENERGY CROSS-LINKING ORGANIC THIN-FILM TRANSISTOR INSULATION LAYER MATERIAL, OVERCOAT INSULATION LAYER, AND ORGANIC THIN-FILM TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide an organic thin-film transistor insulation layer material capable of manufacturing an organic thin-film transistor with a small absolute value of a threshold voltage.;SOLUTION: The organic thin-film transistor insulation layer material contains a high molecular compound (A) having a repeating unit containing fluorine atoms and a repeating unit containing a functional group that generates a dimerization reaction absorbing optical energy or electron beam energy.;COPYRIGHT: (C)2012,JPO&INPIT