PHOTOMASK BLANK, METHOD FOR MANUFACTURING THE SAME, PHOTOMASK, OPTICAL PATTERN IRRADIATION METHOD, AND METHOD FOR DESIGNING TRANSITION METAL-SILICON MATERIAL FILM

摘要

PROBLEM TO BE SOLVED: To allow optical pattern irradiation in optical lithography without changing a pattern exposure condition of an exposure device even in the case of more accumulation of irradiation with high energy light than conventional, by largely suppressing the deterioration of pattern dimensional variation accompanying degeneration of transition metal-silicon material films such as a MoSi material film due to cumulative irradiation with high energy light like ArF excimer laser light, with respect to a half-tone phase shift film, a light shielding film, etc., formed of a transition metal-silicon material.SOLUTION: A photomask blank includes a transition metal-silicon material film which is formed of a transition metal-silicon material containing a transition metal, silicon, oxygen, and nitrogen and satisfying 4×C/100-6×C/1001 (where Cis a percentage content (atomic percent) of silicon and Cis a percentage content (atomic percent) of the transition metal) and contains 3 or more atomic percent oxygen.