首页> 外国专利> TRANSDUCER FOR CONVERTING TEMPORAL TEMPERATURE CHANGE, ELECTRONIC CHIP CONTAINING THE SAME, AND METHOD FOR MANUFACTURING ELECTRONIC CHIP CONTAINING TRANSDUCER FOR CONVERTING TEMPORAL TEMPERATURE CHANGE

TRANSDUCER FOR CONVERTING TEMPORAL TEMPERATURE CHANGE, ELECTRONIC CHIP CONTAINING THE SAME, AND METHOD FOR MANUFACTURING ELECTRONIC CHIP CONTAINING TRANSDUCER FOR CONVERTING TEMPORAL TEMPERATURE CHANGE

机译:用于转换温度变化的传感器,包含该电子芯片的电子芯片以及制造用于转换温度变化的电子芯片的方法

摘要

PROBLEM TO BE SOLVED: To provide a transducer for converting a temporal temperature change to a potential difference, having a sensitivity comparable to the sensitivity of conventional pyroelectric materials with a large pyroelectric coefficient and consisting of a pyroelectric material which can be easily manufactured using a microelectronic manufacturing method.SOLUTION: A transducer includes: an upper electrode (40) which is conductive and placed opposite to an object of which a temporal temperature change is measured; a conductive bottom electrode (42); and a pyroelectric material layer (44) which is at least single-layered, and placed between the upper electrode (40) and the bottom electrode (42) to generate a potential difference in accordance with the temporal temperature change even when there is no mechanical external stress between the upper electrode and the bottom electrode. At least one layer of the pyroelectric material layer has a III-V nitride as its base.
机译:解决的问题:提供一种用于将时间温度变化转换为电势差的传感器,其灵敏度可与具有大热电系数的常规热电材料的灵敏度相媲美,并且由可使用微电子技术轻松制造的热电材料组成解决方案:一种换能器包括:上电极(40),该上电极(40)具有导电性,并与测量时间温度变化的物体相对放置;导电底部电极(42);热电材料层(44),其至少是单层的,并且即使在没有机械力的情况下也被放置在上电极(40)和下电极(42)之间,以根据瞬时温度变化产生电势差上电极和下电极之间的外部应力。热电材料层的至少一层具有III-V族氮化物作为其基底。

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