Production manner and plasma treatment manner of semiconductor equipment, the production device of semiconductor equipment, in regard to the control supervisor and

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method or the like for a semiconductor device capable of making the time required for a plasma etching process forming a trench for an element isolation shorter than conventional devices, and capable of improving a productivity by enhancing a throughput.;SOLUTION: A silicon nitride film 102, an antireflection film (ARC) 103, and photoresists 104, are formed on the surface of a silicon board 101 in the order from the lower side. The photoresists 104 have openings 105 in a specified pattern. The antireflection film (ARC) 103, the silicon nitride film 102, and the silicon board 101, are etched continuously and collectively by using an etching gas containing at least an NF₃ gas or an SF₆ gas or the NF₃ gas and the SF₆ gas, thus forming the trenches 105 for the element isolation (STI).;COPYRIGHT: (C)2007,JPO&INPIT