Deposition of amorphous silicon films by electron cyclotron resonance

摘要

I discloses a method of forming a film: (H aSi) amorphous silicon on a substrate by deposition from a plasma. By placing in a container a substrate was introduced into the vessel precursor gas, is extracted from the vessel dissociated gas and unreacted have the low pressure vessel by this. The Microwave energy is introduced into the gas in the container distributed electron cyclotron resonance (DECR) to generate a plasma in the chamber, to deposit material on the substrate from the plasma. During deposition 200-600 ° C the temperature of the substrate was maintained in the range of 225-350 ° C, preferably, preferably using a high-frequency output source at a range of 50-250mW / cm ² of the substrate holding member - I applying a bias voltage level that causes sheath potential in the range of from 30 -105V. [Selection] Figure Figure 1