首页> 外国专利> The center which was formed with the silica where being the method of producing the structure of the flat type which is formed the flat type structure null which it produces from use, and especially silicon of method and the aforementioned method of producing

The center which was formed with the silica where being the method of producing the structure of the flat type which is formed the flat type structure null which it produces from use, and especially silicon of method and the aforementioned method of producing

机译:由二氧化硅形成的中心是利用使用所产生的平坦型结构形成的平坦型结构的制造方法,特别是硅的制造方法和上述制造方法

摘要

This invention those by especially silicon in regard to the structure of the flat type which is produced with method and this method of producing the structure of flat type, regards. At least one baseplate (2) and is allotted between upper layer (3) and the baseplate and upper layer one which center (4) it possesses the structure which depends on invention, at least. The above-mentioned center (4) the atom or the molecule of the substance of the baseplate at least has had one where the exogenous molecule or the atom which differs is arranged basic substance. According to this invention, center (4) is deformation possible plastically, by the exogenous molecule or the existence of the atom where the inside of the basic substance which is selected is selected, the minute bubble or the minute air gap (7), the kind of heat treatment which causes irreversible formation it is done at the intermediate inside layer vis-a-vis the plate. Selective figure Figure 3
机译:关于本发明,特别是关于利用方法制造的扁平型的结构以及该扁平型的结构的制造方法,以硅为例。至少一个底板(2)被分配在上层(3)与底板和上层之间,至少一个底板(2)的中心(4)具有至少取决于本发明的结构。上述中心(4)的基板的原子或分子至少至少具有其中外源分子或原子排列成碱性物质的一个。根据本发明,通过选择外来分子或原子的存在,中心(4)可塑性变形,其中选择了基本物质的内部,即微小气泡或微小气隙(7)。导致不可逆形成的一种热处理是在相对于板的中间内层进行的。<选择图>图3

著录项

  • 公开/公告号JP4932485B2

    专利类型

  • 公开/公告日2012-05-16

    原文格式PDF

  • 申请/专利权人 ソイテック;

    申请/专利号JP20060530396

  • 发明设计人 ブルエル ミッシェル;

    申请日2004-09-23

  • 分类号H01L21/02;H01L27/12;

  • 国家 JP

  • 入库时间 2022-08-21 17:39:48

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