首页> 外国专利> LASER PROCESSING METHOD, AND METHOD FOR MANUFACTURING METHOD MULTILAYER FLEXIBLE PRINTED WIRING BOARD USING THE LASER PROCESSING METHOD

LASER PROCESSING METHOD, AND METHOD FOR MANUFACTURING METHOD MULTILAYER FLEXIBLE PRINTED WIRING BOARD USING THE LASER PROCESSING METHOD

机译:激光加工方法,以及使用该激光加工方法制造多层柔性印刷线路板的方法

摘要

PROBLEM TO BE SOLVED: To form a via hole with a smallest possible number of shots without having a resin residual in the via hole and generating deformation and penetration of an inner layer circuit pattern exposed in the via hole.SOLUTION: In the laser processing method, via holes 23, 24 are formed by removing a layer to be processed that includes: a flexible insulating base 1 having conformal masks 7, 8a provided on the surface; and an adhesive layer 12, which is provided below the insulating base, and which has a light absorption degree higher than that of the insulating base material 1, and a decomposition temperature lower than that of the insulating base material 1 in the wavelength region of a processing laser beam. After applying one shot of pulsed light having a first energy density, with which deformation and penetration of a conductive film 2A are not caused, and with which the insulating base material 1 can be removed by one shot, pulsed light having a second energy density smaller than the first energy density is applied, the second energy density being a density with which the remaining layer to be processed can be removed with a predetermined number of shots without causing deformation and penetration of the conductive film 2A.
机译:解决的问题:在不使树脂残留在通孔中的情况下,以尽可能少的打孔次数形成通孔,并使通孔中露出的内层电路图形产生变形和穿透。通过去除要处理的层形成通孔23、24,该层包括:在表面上具有保形掩模7、8a的柔性绝缘基底1;粘接剂层12,其设置在绝缘基材的下方,并且在a的波长区域中的吸光度高于绝缘基材1的吸光度,并且分解温度低于绝缘基材1的分解温度。处理激光束。在施加一次具有第一能量密度的脉冲光之后,不会引起导电膜2A的变形和穿透,并且一次能够除去绝缘基材1,之后,第二能量密度变小。施加比第一能量密度大的密度的第二能量密度是能够以预定的喷射次数去除待处理的剩余层而不会引起导电膜2A变形和穿透的密度。

著录项

  • 公开/公告号JP2011255407A

    专利类型

  • 公开/公告日2011-12-22

    原文格式PDF

  • 申请/专利权人 NIPPON MEKTRON LTD;

    申请/专利号JP20100132922

  • 发明设计人 MATSUDA FUMIHIKO;NARUSAWA YOSHIHIKO;

    申请日2010-06-10

  • 分类号B23K26/38;B23K26;B23K26/40;H05K3;H05K3/46;B23K101/42;

  • 国家 JP

  • 入库时间 2022-08-21 17:39:28

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