首页> 外国专利> SURFACE PLASMON ENHANCED FLUORESCENCE SENSOR, AND CHIP STRUCTURE UNIT USED FOR SURFACE PLASMON ENHANCED FLUORESCENCE SENSOR

SURFACE PLASMON ENHANCED FLUORESCENCE SENSOR, AND CHIP STRUCTURE UNIT USED FOR SURFACE PLASMON ENHANCED FLUORESCENCE SENSOR

机译:表面等离激元荧光传感器,以及用于表面等离激元荧光传感器的芯片结构单元

摘要

PROBLEM TO BE SOLVED: To provide a surface plasmon enhanced fluorescence sensor that detects an analyte with super-high precision by improving a value of S/N.;SOLUTION: There is provided a chip structure unit used for a surface plasmon enhanced fluorescence sensor 10 that detects enhanced fluorescence by irradiating a metal thin film 12 with exciting light from a light source 22 to enhance an electric field on the metal thin film, and exciting a fluorescent material held in a reaction region 40 on a reaction layer formed on an upper surface of the metal thin film. The chip structure unit 36 comprises: a chip structure 36 comprising the metal thin film 12, a dielectric member 16 formed on a bottom surface of the metal thin film, and the reaction layer having the reaction region 40 formed on the upper surface of the metal thin film; and a light collection member 34 arranged between the reaction layer of the chip structure 36 and optical detection means 30 and comprising a total reflecting function member 32 allowing the fluorescence to reach the optical detection means under total reflection conditions.;COPYRIGHT: (C)2012,JPO&INPIT
机译:解决的问题:提供一种通过提高S / N值以超高精度检测被分析物的表面等离激元增强型荧光传感器。解决方案:提供一种用于表面等离激元增强型荧光传感器的芯片结构单元10通过用来自光源22的激发光照射金属薄膜12以增强金属薄膜上的电场,并激发形成在上表面的反应层上的反应区域40中的荧光材料,从而检测增强的荧光。金属薄膜。芯片结构单元36包括:芯片结构36,该芯片结构36包括金属薄膜12,形成在金属薄膜的底表面上的电介质构件16,以及具有在金属的上表面上形成的反应区域40的反应层。薄膜;聚光元件34设置在芯片结构36的反应层和光学检测装置30之间,并包括全反射功能构件32,该全反射功能构件32允许荧光在全反射条件下到达光学检测装置。 ,JPO&INPIT

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