GaN-BASED LIGHT-EMITTING DIODE AND LIGHT-EMITTING DEVICE USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a GaN-based light-emitting diode having a structure that allows light traveling in the opposite direction to the light extraction direction within an element to be more efficiently reflected, thereby improving light extraction efficiency.;SOLUTION: The GaN-based light-emitting diode comprises: a laminate including an n-type GaN-based semiconductor layer 2, a light-emitting layer 3 composed of a GaN-based semiconductor, and a p-type GaN-based semiconductor layer 4 in this sequence; a semiconductor electrode layer P2a that is formed on a surface of the p-type GaN-based semiconductor layer 4, and is composed of an n-type semiconductor transmitting light generated from the light-emitting layer; metal electrodes P2b partially formed on a surface of the semiconductor electrode layer; a transparent insulating film Ins that is formed on the surface of the semiconductor electrode layer P2a so as to sandwich the metal electrodes P2b, and has a lower refractive index than that of the semiconductor electrode layer P2a; and a metal reflection film R formed on a surface of the transparent insulating film Ins.;COPYRIGHT: (C)2012,JPO&INPIT