The system and pattern defect inspection method using an electron beam inspection system, as well as multi-beam electron beam inspection system or map projection

摘要

PROBLEM TO BE SOLVED: To provide a mirror electron projection type ( including an MPJ type (also including an SEPJ type)) electron beam inspection device which is made possible to optimize a condition and a pattern defect inspection method and system by using the above electron beam inspection device.;SOLUTION: The mirror electron projection type electron beam inspection device is provided with an electrostatic charging unit which irradiates electrostatic charge electron beams, an electron beam irradiation means which irradiates mirror projection electron beams to an inspection region, in the neighborhood of which a potential distribution is formed, a detecting means which detects a secondary electron or a reflective electron generated on or near the surface of a sample and a defect inspection means which detects a defect by processing a mirror image signal detected by the detecting means, and is provided with an irradiation condition optimization means which optimizes an irradiation condition of the electrostatic beams.;COPYRIGHT: (C)2007,JPO&INPIT