The case where the metal gate of dual work function is integrated change of the effective work function which uses ion implantation

摘要

Topic The method of changing effective work function making use of ion implantation is offered the occasion where the metal gate of dual work function is integrated.Solutions Ion implantation in order to change effective work function in order to integrate the metal gate which has dual effective work function is presented. As for one method, the field-effect transistor of 1st type (FET) the territory and with respect to the FET territory of 2nd type, high permittivity (high k) forming layer and, the FET territory of 1st type and with respect to the FET territory of 2nd type, forming the metal layer which has the 1st effective work function which conforms to FET of 1st type and, by filling kind to the metal inside layer with respect to the FET territory of 2nd type, with respect to the FET territory of 2nd type 1stTo include with the fact that it changes to the effective work function where 2nd differs it is possible effective work function. Selective figure Figure 4