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The thin film formation device, thin film formation manner and polarization reversal possible conversion manner, evaporating the fluoridation vinylidene oligomer

机译:薄膜形成装置,薄膜​​形成方式和极化反转可能的转换方式,蒸发氟化亚乙烯基低聚物

摘要

PROBLEM TO BE SOLVED: To provide an apparatus 1 for thin film formation, capable of efficiently forming a thin film 51 in a short period of time.;SOLUTION: An evaporation source 30 in which a VDF oligomer 33 is disposed and a substrate 10 to be subjected to vapor deposition are separated from each other while the evaporation source 30 is heated. Then, a separated state in which the substrate 10 and the evaporation source 30 are separated from each other is shifted into a neighboring state in which a thin film formation surface 11 of the substrate 10 and a VDF oligomer supplying surface 32 of the evaporation source 30 come close to and face each other across a heat-insulating mask 20 by moving the substrate 10 and/or the evaporation source 30. In the neighboring state, the thin film 51 of the VDF oligomer 33 is deposited onto the thin film formation surface 11.;COPYRIGHT: (C)2009,JPO&INPIT
机译:解决的问题:提供一种用于薄膜形成的设备1,其能够在短时间内有效地形成薄膜51。解决方案:蒸发源30,其中布置了VDF低聚物33,并且基板10在蒸发源30被加热的同时,要进行气相沉积的金属彼此分离。然后,将基板10和蒸发源30彼此分离的分离状态转变成基板10的薄膜形成表面11和蒸发源30的VDF低聚物供应表面32的相邻状态。通过移动基板10和/或蒸发源30,隔着隔热掩模20彼此靠近并面对。在相邻状态下,VDF低聚物33的薄膜51沉积在薄膜形成表面11上。;版权:(C)2009,日本特许厅和INPIT

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