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Irradiating the pulse laser light which is excimer

机译:照射准分子的脉冲激光

摘要

PROBLEM TO BE SOLVED: To ensure uniform crystallization regardless of variations in laser output during laser annealing.;SOLUTION: A laser anneal processing method radiates pulse laser beams on a non-single crystal semiconductor film to perform anneal processing, wherein the pulse laser beams are energy-controlled such that the maximum peak height of pulse waveform of the laser beams reach a given height. The control is performed by a laser anneal device that includes: a laser oscillator 1 for outputting pulse laser beams; an optical system 4 for guiding pulse laser beams to the non-single crystal semiconductor film; a maximum peak height measurement unit for measuring the maximum peak height of the pulse laser beams; and a control unit 8 that controls a variable attenuator 2 for adjusting output energy of the pulse laser beams in the laser oscillator or attenuation ratio of the pulse laser beams such that the maximum peak height reaches a given height in response to the measurement result by the maximum peak height measurement unit.;COPYRIGHT: (C)2010,JPO&INPIT
机译:解决的问题:为了确保均匀的结晶,而不管激光退火过程中激光输出的变化如何;解决方案:激光退火处理方法是在非单晶半导体膜上辐射脉冲激光束以进行退火处理,其中脉冲激光束是能量控制使得激光束的脉冲波形的最大峰值高度达到给定高度。该控制由激光退火装置执行,该激光退火装置包括:用于输出脉冲激光束的激光振荡器1;以及用于输出脉冲激光束的激光振荡器。光学系统4,用于将脉冲激光束引导至非单晶半导体膜。最大峰值高度测量单元,用于测量脉冲激光束的最大峰值高度;控制单元8,其控制可变衰减器2,该可变衰减器2用于响应于激光振荡器的测量结果,调整激光振荡器中的脉冲激光束的输出能量或脉冲激光束的衰减率,使得最大峰值高度达到给定高度。最大峰高测量单位。;版权所有(C)2010,JPO&INPIT

著录项

  • 公开/公告号JP4863407B2

    专利类型

  • 公开/公告日2012-01-25

    原文格式PDF

  • 申请/专利权人 株式会社日本製鋼所;

    申请/专利号JP20090021164

  • 发明设计人 次田 純一;鄭 石煥;

    申请日2009-02-02

  • 分类号H01L21/20;H01L21/268;

  • 国家 JP

  • 入库时间 2022-08-21 17:36:31

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