Independent monocrystal production manner of III group nitride and the layered product which includes III group nitride monocrystal formation

摘要

P To provide a method for producing a single crystal in an independent state of an AlN-containing AlN based group III nitride by a simple method. PSOLUTION: A first intermediate layer 4 is formed ON a base substrate 3 in which a growing base layer 2 of AlN is formed ON a sapphire base material 1, and an AlN single crystal layer 7 is further formed by an HVPE (hydride vapor phase epitaxy) process and so as to obtain a stacked body 10. In this case and the first intermediate layer 4 is formed by a substance having a decomposition temperature lower than that of the single crystal layer 7, preferably and by a group III nitride such as AlGaN. When the stacked body 10 is heated at a temperature higher than the decomposition temperature of the first intermediate layer 4 and lower than the decomposition temperature of the single crystal layer 7, e.g., to 1,650° C, the first intermediate layer 4 is decomposed away and thus an AlN based group III nitride single crystal 7a in an independent state composed mainly of the part of the AlN single crystal layer 7 can be obtained. PCOPYRIGHT: (C)2007 and JPO& INPIT