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Terahertz radiation device using the same, and terahertz wave generation diode

机译:使用太赫兹辐射装置的太赫兹辐射产生二极管

摘要

PROBLEM TO BE SOLVED: To provide a microminiaturized terahertz wave generating diode, having a simple structure and capable of generating pulsed waves, a continuous wave and laser oscillation, and having an optical system for concentration and divergence etc. of the generated terahertz waves; and to provide terahertz wave radiating equipment comprising this diode and a drive circuit etc.;SOLUTION: At least one pn junction, and an active region in a region of at least one conductivity type from the conductivity types of the p-type and the n-type constructing this p-n junction are provided in a semiconductor substrate. An impurity A for forming this conductivity type and an impurity B for forming the other conductivity type are added to this active region, where the impurity B is less than the impurity A and is added to the extent that it will not degenerate. When a forward bias is applied to the p-n junction, the electromagnetic waves radiated when the minority carriers injected into the active region recombine via the impurity level of the impurity B are set to be in a terahertz region.;COPYRIGHT: (C)2006,JPO&NCIPI
机译:解决的问题:提供一种微型的太赫兹波产生二极管,其结构简单并且能够产生脉冲波,连续波和激光振荡,并且具有用于对所产生的太赫兹波进行集中和发散等的光学系统;并提供包括该二极管和驱动电路等的太赫兹波辐射设备;解决方案:至少一个pn结,以及在p型和n型导电类型中至少一种导电类型的区域中的有源区在半导体衬底中提供构成该pn​​结的p型。将用于形成这种导电类型的杂质A和用于形成另一种导电类型的杂质B添加到该有源区,其中杂质B小于杂质A并且以不会退化的程度添加。当在pn结上施加正向偏压时,将通过杂质B的杂质能级注入到有源区中的少数载流子复合时所辐射的电磁波设置为太赫兹区。;版权:(C)2006,日本特许厅

著录项

  • 公开/公告号JP4910079B2

    专利类型

  • 公开/公告日2012-04-04

    原文格式PDF

  • 申请/专利权人 木村 光照;

    申请/专利号JP20040138572

  • 发明设计人 木村 光照;

    申请日2004-05-07

  • 分类号H01L33/28;

  • 国家 JP

  • 入库时间 2022-08-21 17:35:49

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